JBX-6300FS can easily write patterns down to 8nm or less (actual result: 5nm) by the employment of an electron optical system that automatically adjusts a 2.1nm-diameter electron beam at 100kV accelerating voltage. Furthermore, this EB system achieves high field-stitching and overlay accuracy of 9nm or less, providing high cost performance. Furthermore, a unique automatic correction function developed by JEOL enables high-precision pattern writing. JBX-6300FS responds to a wide range of requirements, such as R&D of cutting-edge devices, nanotechnology-related R&D and communication-device production.
